Plasma-Assisted MOCVD Growth of GaAs/GaN/GaAs Thin-Layer Structures by N-As Replacement Using N-Radicals

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概要

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• GaAs/GaN/GaAs thin-layer structures were grown by plasma-assisted low-pressure metalorganic chemical vapor deposition. GaN layers were formed by exposing the surfaces of GaAs epitaxial layers to nitrogen-radical fluxes. When the nitrogen amount exceeded that in one-monolayer-thick GaN, the GaN/GaAs interfaces deteriorated drastically. Low-temperature photoluminescence from the structures suggests that the two-dimensional growth of GaN is limited to one-monolayer thick and that the excess nitrogen atoms form GaN clusters in the underlying layers. The one-monolayer-thick GaN embedded in GaAs shows intense photoluminescence, whereas the GaN cluster is non-radiative, probably because of the defects caused by the large lattice-mismatch between GaN and GaAs.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• SATO Michio

  NTT Basic Research Laboratories

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• A Comparison of the Growth of GaAs and GaP frorm Trimethyl-Gallium
• Plasma-Assisted MOCVD Growth of GaAs/GaN/GaAs Thin-Layer Structures by N-As Replacement Using N-Radicals

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