Carrier Density of Epitaxial InN Grown by Plasma-Assisted Metalorganic Chernical Vapor Deposition
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概要
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InN epitaxial layers were grown on (0001) sapphire strbstrates by plasma-assisted metalorganic chemical vapor deposition, by which large amounts of radicals can be supplied to a surface with little ion damage, using tri-ethylindium and nitrogen radicals as the precursors. Low carrier densities were achieved at a growth temperature of 60O℃, which was the highest temperature to grow InN without forming In droplets. Probably because of the slow reaction rate of In -N bond formation, lowering the growth rate was more important than increasing the nitrogen-radical flux. A carrier density of only 4 × 10^19 cm^-3 was achieved.
- 社団法人応用物理学会の論文
- 1997-06-01
著者
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Sato Masa-aki
Faculty Of Mercantile Marine Science Kobe University Of Merchantile Marine
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SATO Michio
NTT Basic Research Laboratories
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