Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy
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Thermal stability of the (2×4) structures on InAs and GaAs (001) surfaces is studied by using scanning tunneling microscopy with atomic resolution. Even just before the transition to a (4×2) structure, the annealed InAs surface has much lower density of kinks in the dimer vacancy rows than the annealed GaAs. This difference leads to a unified model that can explain both the 1st order phase transition and the peculiar electric properties of an InAs (001) surface.
- 社団法人応用物理学会の論文
- 1994-10-01
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