Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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SAKU Tadashi
NTT Basic Research Laboratories
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Saku T
Ntt Basic Res. Lab. Kanagawa Jpn
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Yamada Syoji
Ntt Basic Research Laboratories
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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NAKATA Syunji
NTT Basic Research Laboratories
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Hirayama Y
Ntt Basic Research Laboratories Ntt Corporation
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
関連論文
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- Electrostatic coupling between two double-quantum dots studies by resonant tunneling current
- Long Spin Relaxation Time Observed in a Lateral Quantum Dot
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric Al_xGa_As/GaAs/Al_yGa_As Quantum Wells
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_Ga_As thin films epitaxially grown on InP substrates
- 22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_Ga_As on (001) and (111)A oriented InP substrates
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Application of InAs Freestanding Membranes to Electromechanical Systems
- Application of InAs Free-Standing Membranes for Electromechanical Systems
- Back-Gated Point Contact
- Back-Gated Point Contact
- Quantum Point Contacts in a Density-Tunable Two-Dimensional Electron Gas
- Migration-Enhanced Epitaxy of GaAs and AlGaAs
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
- 28aYB-6 LT-STS study of two-dimensional quantization in In_Ga_As/In_Al_As heterostructures epitaxially grown on lattice-matched InP(111)A substrates
- A New Si Doping Source for GaAs Growth by Molecular Beam Epitaxy
- Comparison of GaAs Facet Formation on Patterned Substrate during Molecular Beam Epitaxy and Migration Enhanced Epitaxy
- Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
- Defects in Ga^+ Jon Implanted GaAs-AlAs MQW Structures
- Near Room Temperature CW Operation of 660 nun Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
- Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
- Quantized Conductance in InGaAs Point Contacts at High Temperatures
- High Mobility Electrons in AlGaAs/GaAs Modulation-Doped Heterostructures and Their Ballistic Characteristics
- Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
- Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
- Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
- Carrier Concentration Saturation of Double Si Doping Layers in GaAs
- Growth of GaAs/InAs Antidot Structure by Solid-Source MBE
- Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE
- Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Transmission Type RF Single Electron Transistor Operation of a Semiconductor Quantum Dot
- Doubly Enhanced Skyrmions in v=2 Bilayer Quantum Hall States : Condensed Matter: Electronic Properties, etc.
- n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
- Dependence of ErAs Clustering and Er Segregation in ErAs/GaAs Heterostructures on Growth Temperature
- Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy : Semiconductors and Semiconductor Devices
- Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy : Condensed Matter
- Thermal Annealing Effect of AlAs-GaAs Superlattice Grown at 300℃ by Migration-Enhanced Epitaxy : Condensed Matter
- Characterization of GaAs/Si/GaAs Heterostructures
- Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
- Observation of Transient Behavior of GaAs MBE Growth by RHEED Oscillation
- Molecular Beam Epitaxial Growth of GaAs with Arsenic Molecules Transported by Hydrogen Gas
- Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
- Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam
- Flow-Rate Modulation Epitaxy of GaAs
- p^+ -n^+ GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy
- Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces
- Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
- Chemical Shift in Optical Reflection Spectra Observed During III-V Semiconductor Metalorganic Chemical Vapor Deposition Growth by Surface Photo-Absorption Method
- Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy
- Structural Properties of (GaAs)_(Si_2)_x Layers on GaAs(100) Substrates Grown by Migration-Enhanced Epitaxy
- X-Ray Diffraction Analysis of One-Dimensional Quasiperiodic Superlattices Grown by Migration-Enhanced Epitaxy
- Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy
- Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy
- Impurity Doping Effect on the Dislocation Density in GaAs on Si (100) Grown by Migration-Enhanced Epitaxy
- Se Adsorption on (001) GaAs under Various AS_4 Pressures
- Selenium Doping in GaAs Grown by Molecular Beam Epitaxy
- Effect of As Pressure on Se δ-Doped in GaAs by Molecular Beam Epitaxy
- Effects of Annealing on the Structural Properties of GaAs on Si(100) Grown at a Low Temperature by Migration-Enhanced Epitaxy
- Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
- Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption Method
- Growth of ZnSe/GaAs Superlattices by Migration-Enhanced Epitaxy
- Lattice Vibration of Thin-Layered AlAs-GaAs Superlattices
- Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
- Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy