Effect of As Pressure on Se δ-Doped in GaAs by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Using elementary Se as an n-type dopant, Se δ-doped GaAs films were grown on (001) GaAs substrates by molecular beam epitaxy. The results of secondary ton mass spectroscopy and capacitance-voltage measurement show that it is necessary to use adequate As pressure during Se deposition to form a sharp interface. The Se concentration in the films did not change monotonically and reached a maximum value followed by a minimum value as a function of Se deposition time. The Se incorporation rate decrease over long Se deposition time is probably caused by Se condensation on the surface to form more volatile molecules. A possible model of the Se-adsorbed surface is proposed by considering the reflection high-energy electron diffraction patterns.
- 社団法人応用物理学会の論文
- 1995-09-15
著者
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Sano E
Institute Of Laser Engineering
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SANO Eriko
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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