Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
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概要
- 論文の詳細を見る
Reflection high-energy electron diffraction is observed during the growth of GaAs, AlGaAs, and InAs by migration-enhanced epitaxy on misoriented (100) substrates. The influence of an As-free atmosphere during Ga deposition in migration-enhanced epitaxy on step-flow growth is examined. Measurements of the change in specular peak intensity show that an As-free atmosphere accelerates step-flow growth, and that the ease with which step-flow growth occurs follows the order of InAs, GaAs, and AlGaAs. On the other hand, measurements of the specular peak width of the diffraction intensity profiles show that uniform step structures can be obtained for GaAs and AlGaAs layers under the same conditions if a small amount of As pressure is added during the metallic atom deposition in the process of migration-enhanced epitaxy.
- 社団法人応用物理学会の論文
- 1991-04-15
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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