Se Adsorption on (001) GaAs under Various AS_4 Pressures
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概要
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We used reflection high-energy electron diffraction (RHEED) to investigate the adsorption of Se on (001) GaAs surfaces under different residual As_4 pressures at a substrate temperature of 510℃. Under a fixed Se pressure of 5×10^<-9> Torr, the diffraction pattern showed a (2×4) reconstruction when the As_4 pressure was 5×10^<-8> Torr. When the AS_4 pressure was reduced to the level of Se pressure, the surface showed (4×3) reconstruction. When the AS_4 pressure was further reduced to 5×10^<-9> Torr, the diffraction spots in the RHEED pattern disappeared, and a halo pattern became dominant. These results show that even at a fixed substrate temperature, the surfacestructure of Se-adsorbed (001) GaAs can be sensitively changed by varying the As_4 pressure.
- 社団法人応用物理学会の論文
- 1993-05-01
著者
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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SANO Eriko
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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