High Mobility Electrons in AlGaAs/GaAs Modulation-Doped Heterostructures and Their Ballistic Characteristics
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関連論文
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs
- A New Si Doping Source for GaAs Growth by Molecular Beam Epitaxy
- Comparison of GaAs Facet Formation on Patterned Substrate during Molecular Beam Epitaxy and Migration Enhanced Epitaxy
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
- High Mobility Electrons in AlGaAs/GaAs Modulation-Doped Heterostructures and Their Ballistic Characteristics
- Carrier Concentration Saturation of Double Si Doping Layers in GaAs
- Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Dependence of ErAs Clustering and Er Segregation in ErAs/GaAs Heterostructures on Growth Temperature
- Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy : Semiconductors and Semiconductor Devices
- Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy : Condensed Matter
- Characterization of GaAs/Si/GaAs Heterostructures
- Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
- p^+ -n^+ GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy
- Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces
- Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
- Chemical Shift in Optical Reflection Spectra Observed During III-V Semiconductor Metalorganic Chemical Vapor Deposition Growth by Surface Photo-Absorption Method
- Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy
- Structural Properties of (GaAs)_(Si_2)_x Layers on GaAs(100) Substrates Grown by Migration-Enhanced Epitaxy
- X-Ray Diffraction Analysis of One-Dimensional Quasiperiodic Superlattices Grown by Migration-Enhanced Epitaxy
- Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy
- Impurity Doping Effect on the Dislocation Density in GaAs on Si (100) Grown by Migration-Enhanced Epitaxy
- Se Adsorption on (001) GaAs under Various AS_4 Pressures
- Selenium Doping in GaAs Grown by Molecular Beam Epitaxy
- Effect of As Pressure on Se δ-Doped in GaAs by Molecular Beam Epitaxy
- Effects of Annealing on the Structural Properties of GaAs on Si(100) Grown at a Low Temperature by Migration-Enhanced Epitaxy
- Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
- Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption Method
- Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
- Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy
- Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-Absorption