Dependence of ErAs Clustering and Er Segregation in ErAs/GaAs Heterostructures on Growth Temperature
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概要
- 論文の詳細を見る
The effect of growth temperature on the growth properties of ErAs/GaAs heterostructures grown by low-temperature migration-enhanced epitaxy and molecular beam epitaxy is investigated in detail using transmission electron microscopy, double-crystal X-ray diffraction and secondary ion mass spectroscopy. Our results demonstrate that the formation of ErAs clusters at the ErAs/GaAs interface occurs even at very low growth temperatures (320℃). Moreover, we clearly observe that the size of the clusters drastically increases and Er segregation takes plaoe when the growth temperature is increased. All our characterization results suggest that when the sample are grown by migration-enhanced epitaxy at 320℃, these problems can be limited, leading to an enhancement of crystal quality.
- 社団法人応用物理学会の論文
- 1993-12-15
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Jourdan Nicolas
Ntt Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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