Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
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概要
- 論文の詳細を見る
Using a molecular beam epitaxy/scanning tunneling microscopy (MBE/STM) system, we have compared the surface morphology of GaAs grown by MBE and migration-enhanced epitaxy (MEE) at a substrate temperature of 300℃, which is much lower than normal MBE growth temperature. In terms of surface flatness, the difference between MBE and MEE was clearly visible. The surface roughness of MEE-grown GaAs was at most 2-monolayer and the surface was covered with large terraces with small islands on them. On the other hand, in spite of the clear reflection high energy electron diffraction (RHEED) intensity oscillation during the growth, the low-temperature MBE-grown surface was very rough and large terraces could not be seen on the surface. We concluded that these results are due to the differences in the growth mechanisms of MBE and MEE.
- 社団法人応用物理学会の論文
- 1998-03-15
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
School of Science and Engineering, Waseda University
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Horikoshi Yoshiji
School Of Science And Engineering Waseda University
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Suzuki Daiichi
School Of Science And Engineering Waseda University
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