Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures
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概要
- 論文の詳細を見る
Nanoscale in-plane structure devices are fabricated by electron beam lithography followed by electron cyclotron resonance reactive ion etching. We investigate the negative differential resistance (NDR) of InGaAs/InAlAs in-plane structure devices. The NDR appears in the current–voltage ($I$–$V$) characteristics of simple two-terminal in-plane short-channel devices. NDR characteristics depend on the effective channel width of in-plane gate transistors and become more pronounced when the channel conductance is increased by applying gate voltages. In a short-channel in-plane gate transistor, a more prominent NDR is observed and the NDR appears even at room temperature. In addition, the NDR onset voltage shifts to lower voltages when the channel length decreases. The NDR phenomenon is most likely caused by the real-space transfer of electrons from a high mobility channel to a low mobility layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-10-25
著者
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ONOMITSU Koji
NTT Basic Research Laboratories
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Horikoshi Yoshiji
School Of Science And Engineering Waseda University
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Komatsuzaki Yuji
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
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Higashi Kazuhiro
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
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Kyougoku Tomoteru
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
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Onomitsu Koji
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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