Amorphous CuxGa1-xO Film Deposition by Ultrahigh Vacuum Radio Frequency Magnetron Sputtering
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概要
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Amorphous Ga2O3 and CuxGa1-xO thin films were prepared on glass substrates by ultrahigh-vacuum radio frequency magnetron sputtering at room temperature. The films of amorphous Ga2O3 show a very high transmittance (nearly 90%). As the oxygen partial pressure increases, a dramatic shift is observed in the optical band gap of the films. The band gap energies of the films are determined by a liner fit of the transmittance spectra and are estimated to be between 4.9 and 5.3 eV. Band gap energies of amorphous CuxGa1-xO films are also estimated by the same method. They show prominent bowing characteristics with a bowing parameter as large as 9.1 eV. The band gap energy of amorphous Cu0.5Ga0.5O is formed to be much smaller than that of crystalline CuGaO2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Horikoshi Yoshiji
School Of Science And Engineering Waseda University
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Ishikawa Hiroki
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Takeuchi Norikazu
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Okuda Nario
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Takeuchi Toshio
Kagami Memorial Labolatory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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