Magnetic Properties of Multiply Mn $\delta$-Doped GaAs
スポンサーリンク
概要
- 論文の詳細を見る
The magnetic properties of multiply Mn $\delta$-doped GaAs samples with various spacer widths are investigated to precisely evaluate the interlayer ferromagnetic interaction. Curie temperature as well as coercive field and remanent magnetization decrease when spacer width increases, owing to suppression of the ferromagnetic coupling between $\delta$-doped (Ga,Mn)As planes. In particular, coercive field and remanent magnetization disappear when the spacer width exceeds 7 monolayers since the ferromagnetic interaction between Mn-doped layers is completely suppressed and thus, each layer independently acts as a ferromagnet. In contrast, saturation magnetization increases and becomes constant for wider spacers probably because of the suppression of the formation of interstitial Mn, which compensates for holes and forms antiferromagnetic coupling with substitutional Ga.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-11-25
著者
-
Horikoshi Yoshiji
School Of Science And Engineering Waseda University
-
Horikoshi Yoshiji
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
-
Kawaharazuka Atsushi
Waseda Institute for Advanced Study (WIAS), Waseda University, 1-6-1 Nishi-Waseda, Shinjuku, Tokyo 169-8050, Japan
-
Yanagisawa Kohei
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
-
Takeuchi Suguru
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
関連論文
- Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Photoluminescence Quenching by Optical Bias in AlGaAs/GaAs Single Quantum Wells : Electrical Properties of Condonsed Matter
- Growth of GaAs/InAs Antidot Structure by Solid-Source MBE
- Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- X-Ray Analysis of In Distribution in Molecular Beam Epitaxy Grown InGaAs/GaAs Quantum Well Structures
- Electric Field Induced Recombination Centers in GaAs
- Electric Field Induced Recombination Centers in GaAs
- Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy
- Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy
- Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
- Growth of CuGaSe Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy
- Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
- Effect of Excitons in AlGaAs/GaAs Superlattice Solar Cells
- Amorphous CuxGa1-xO Film Deposition by Ultrahigh Vacuum Radio Frequency Magnetron Sputtering
- Magnetic Properties of Multiply Mn $\delta$-Doped GaAs
- Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
- Electrical and Structural Properties of Heavily Ge-Doped GaAs Grown by Molecular-Beam Epitaxy
- Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures
- Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy