X-Ray Analysis of In Distribution in Molecular Beam Epitaxy Grown InGaAs/GaAs Quantum Well Structures
スポンサーリンク
概要
- 論文の詳細を見る
GaAs/InGaAs/GaAs quantum well structures grown on GaAs (001) by molecular beam epitaxy (MBE) at substrate temperatures between 450℃ and 540℃ are investigated using X-ray diffraction (XRD) techniques. As the substrate temperature increases, the diffraction peak angles of InGaAs shift to the lower In composition side, and the integrated diffraction spectrum of the InGaAs peaks weighted by composition x decreases. By assuming a constant segregation rate, we estimate the In desorption and segregation rates, and determine the In distribution profiles of the quantum well structures.
- 社団法人応用物理学会の論文
- 1999-04-15
著者
-
Horikoshi Yoshiji
School Of Science And Engineering Waseda University
-
Aoki Mitsuru
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
-
FUJIMOTO Shingo
School of Science and Engineering, Waseda University
-
Fujimoto Shingo
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
-
Horikoshi Yoshiji
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
関連論文
- Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Photoluminescence Quenching by Optical Bias in AlGaAs/GaAs Single Quantum Wells : Electrical Properties of Condonsed Matter
- Growth of GaAs/InAs Antidot Structure by Solid-Source MBE
- Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- X-Ray Analysis of In Distribution in Molecular Beam Epitaxy Grown InGaAs/GaAs Quantum Well Structures
- Electric Field Induced Recombination Centers in GaAs
- Electric Field Induced Recombination Centers in GaAs
- Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy
- Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy
- Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
- Growth of CuGaSe Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy
- Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
- Amorphous CuxGa1-xO Film Deposition by Ultrahigh Vacuum Radio Frequency Magnetron Sputtering
- Magnetic Properties of Multiply Mn $\delta$-Doped GaAs
- Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
- Electrical and Structural Properties of Heavily Ge-Doped GaAs Grown by Molecular-Beam Epitaxy
- Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures
- Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy