Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-02-15

著者

• TAKAHASHI Yasuo

  Graduate School of Information Science and Technology, Hokkaido University

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Takahashi Y

  Osaka University

• Fujiwara Akira

  NTT Basic Research Laboratories, NTT Corporation

• TAKAHASHI Yasuo

  NTT Basic Research Laboratories, NTT Corporation

• Fujiwara A

  Ntt Basic Research Laboratories Ntt Corporation

• Fujiwara A

  Ntt Corp. Atsugi Jpn

• LIU Kuang-Ting

  NTT Basic Research Laboratories, NTT Corporation

• MURASE Katsumi

  NTT Basic Research Laboratories, NTT Corporation

• HORIKOSHI Yoshiji

  School of Science and Engineering, Waseda University

• Liu K‐t

  National Chen Kung Univ. Twn

• Murase Katsumi

  Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)

• Takahashi Yasuo

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Fujiwara Akira

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Y

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Horikoshi Yoshiji

  School Of Science And Engineering Waseda University

• Takahashi Y

  Department Of Applied Physics School Of Engineering Tohoku University

• Takahashi Yasuo

  The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir

• Liu Kuang-ting

  Ntt Basic Research Laboratories Ntt Corporation:(present)department Of Electronics Engineering Cheng

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• Takahashi Yasuo

  Ntt Basic Research Laboratories Ntt Corporation

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