Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-15

著者

• Fujita Miki

  School Of Science And Engineering Waseda University

• HORIKOSHI Yoshiji

  School of Science and Engineering, Waseda University

• DEESIRAPIPAT Yuparwadee

  School of Science and Engineering, Waseda University

• SASAJIMA Masanori

  School of Science and Engineering, Waseda University

• SUZUKI Ryotaro

  School of Science and Engineering, Waseda University

• ANTARASENA Choompol

  Department of Electrical Engineering, Chulalongkorn University

• Suzuki Ryotaro

  School Of Science And Engineering Waseda University

• Horikoshi Y

  School Of Science And Engineering Waseda University

関連論文

• Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
• Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
• Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
• Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy
• Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
• Determination of the Facet Index in Area Selective Epitaxy of GaAs
• Determination of the Facet Index in Area Selective Epitaxy of GaAs
• Photoluminescence Quenching by Optical Bias in AlGaAs/GaAs Single Quantum Wells : Electrical Properties of Condonsed Matter
• Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy
• Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy
• Growth of Be-doped p-type GaN under Invariant Polarity Conditions
• Growth of GaAs/InAs Antidot Structure by Solid-Source MBE
• Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE
• Simple Fabrication Technique of Symmetrical Emitter-Collector Zinc-doped Planar Ga_Al_xAs/GaAs/Ga_Al_As Double Heterojunction Bipolar Transistors
• Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
• Growth of CuGaSe Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy
• Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
• Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
• Simple Fabrication Technique of Symmetrical Emitter-Collector Zinc-doped Planar Ga1-xAlxAs/GaAs/Ga1-yAlyAs Double Heterojunction Bipolar Transistors
• Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy

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