Simple Fabrication Technique of Symmetrical Emitter-Collector Zinc-doped Planar Ga1-xAlxAs/GaAs/Ga1-yAlyAs Double Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
Symmetrical emitter-collector planar Ga1-xAlxAs/GaAs/Ga1-yAlyAs double heterojunction bipolar transistors have been designed and fabricated. Crystal growth and doping are carried out using liquid phase epitaxy (LPE) technique. Five layers consisting of collector, base, emitter, emitter contact and mask layer, Ga0.6Al0.4As, have been grown consecutively by LPE on GaAs (n+) substrate. After etching the mask layer to open a region for base diffusion, the sample was carried back to the LPE furnace to grow the Zn-doped Ga0.6Al0.4As in order to diffuse Zn to the p-type base. After the process, both the diffusion layer and the mask layer were selectively etched. Ohmic contacts were then made. Finally, the DC characteristics of the transistors were measured to show their symmetrical behaviors.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-04-15
著者
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ANTARASENA Choompol
Department of Electrical Engineering, Chulalongkorn University
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Deesirapipat Yuparwadee
Department Of Electrical Engineering Chulalongkorn University
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THAINOI Supachok
Department of Electrical Engineering, Chulalongkorn University
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Ratanathammaphan Somchai
Department Of Electrical Engineering Chulalongkorn University
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Thainoi Supachok
Department of Electrical Engineering, Chulalongkorn University, Bangkok 10330, Thailand
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Deesirapipat Yuparwadee
Department of Electrical Engineering, Chulalongkorn University, Bangkok 10330, Thailand
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- Simple Fabrication Technique of Symmetrical Emitter-Collector Zinc-doped Planar Ga_Al_xAs/GaAs/Ga_Al_As Double Heterojunction Bipolar Transistors
- Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
- Simple Fabrication Technique of Symmetrical Emitter-Collector Zinc-doped Planar Ga1-xAlxAs/GaAs/Ga1-yAlyAs Double Heterojunction Bipolar Transistors