Simple Fabrication Technique of Symmetrical Emitter-Collector Zinc-doped Planar Ga_<1-x>Al_xAs/GaAs/Ga_<1-y>Al_<y0>As Double Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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ANTARASENA Choompol
Department of Electrical Engineering, Chulalongkorn University
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Antarasena C
Department Of Electrical Engineering Chulalongkorn University
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Deesirapipat Yuparwadee
Department Of Electrical Engineering Chulalongkorn University
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THAINOI Supachok
Department of Electrical Engineering, Chulalongkorn University
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RATANATHAMMAPHAN Somchai
Department of Electrical Engineering, Chulalongkorn University
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Thainoi S
Department Of Electrical Engineering Chulalongkorn University
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Ratanathammaphan Somchai
Department Of Electrical Engineering Chulalongkorn University
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Deesirapiat Yuparwadee
Department of Electrical Engineering, Chulalongkorn University
関連論文
- Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
- Simple Fabrication Technique of Symmetrical Emitter-Collector Zinc-doped Planar Ga_Al_xAs/GaAs/Ga_Al_As Double Heterojunction Bipolar Transistors
- Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
- Simple Fabrication Technique of Symmetrical Emitter-Collector Zinc-doped Planar Ga1-xAlxAs/GaAs/Ga1-yAlyAs Double Heterojunction Bipolar Transistors