Growth of Be-doped p-type GaN under Invariant Polarity Conditions

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-12-15

著者

• Su Yan-kuin

  Department Of Electrical Engineering National Cheng-kung University

• HORIKOSHI Yoshiji

  School of Science and Engineering, Waseda University

• Horikoshi Y

  School Of Science And Engineering Waseda University

• SUGITA Shigenobu

  School of Science and Engineering, Waseda University

• WATARI Yasumasa

  School of Science and Engineering, Waseda University

• YOSHIZAWA Ginga

  School of Science and Engineering, Waseda University

• SODESAWA Jun

  School of Science and Engineering, Waseda University

• YAMAMIZU Hiroshi

  School of Science and Engineering, Waseda University

• LIU Kuan-Ting

  Department of Electrical Engineering, National Chen Kung University

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• Growth of Be-doped p-type GaN under Invariant Polarity Conditions

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