Separately Doped Structures for Red Organic Light-Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
-
Su Yan-kuin
Department Of Electrical Engineering National Cheng-kung University
-
Yang Chuan-yi
Institute Of Electro-optical And Materials Science National Huwei University Of Science And Technolo
-
TSAI Yu-Sheng
Department of Electro-Optics Engineering, National Formosa University
-
JUANG Fuh-Shyang
Institute of Electro-Optical and Materials Science, National Formosa University
-
LIN David
Windell Corporation
-
CHU Chun-Hsun
Electronics Research and Service Organization, Industrial Technology Research Institute
-
CHIU Yi-Tai
Electronics Research and Service Organization, Industrial Technology Research Institute
-
Tsai Yu-sheng
Department Of Electro-optics Engineering National Huwei University Of Science And Technology
-
Chu Chun-hsun
Electronics Research And Service Organization Industrial Technology Research Institute
関連論文
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Photoreflectance Study of InP and GaAs by Metal Organic Chemical Vapor Deposition Using Tertiarybutylphosphine and Tertiarybutylarsine Sources
- Separately Doped Structures for Red Organic Light-Emitting Diodes
- Effects of Doped-Zone Location on the CIE Value of Flexible White Organic Light Emitting Diodes
- Separately Doped Structures for Red Organic Light Emitting Diodes
- Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
- Simulation and Fabrication of InGaP/Al_Ga_As/GaAs Oxide-Confined
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode
- SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
- AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology
- Transparent barrier coatings for flexible organic light-emitting diode applications
- Top emission organic light emitting diodes with double metal layer anode
- Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition
- The Improvement of Luminance Efficiency by the Insertion of Buffer layers in Flexible Organic Light-Emitting Diodes
- Nonspherical LED Packaging Lens for Uniformity Improvement
- Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Temperature Dependence in In_xGa_As/GaAs Double Quantum Well by Contactless Electroreflectance Spectroscopy
- Stability of Measurement of Heterojunction Bipolar Transistors Current-Voltage Characteristics with Thermal Effect : Semiconductors
- AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide : Semiconductors
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
- Enhancement of Luminance Yield of Blue Organic Light-Emitting Diode
- Enhancement of luminance yield of blue light organic light emitting diode
- Top-Emission Inverted Organic Light Emitting Diode Using Aluminum Nitride as Buffer Layer
- Separately Doped Structures for Red Organic Light-Emitting Diodes