Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated the intrinsic defects in ZnO films grown by molecular beam epitaxy by annealing them in O2 and N2 atmosphere. We found that there is a good correlation between the annealing condition and photoluminescence characteristics. The results of annealing experiments suggest that the photoluminescence at 3.358 eV is caused by the excitons bound to oxygen vacancies. The green-yellow emission at around 2.3 eV is also observed in as-grown ZnO epitaxitial films. This emission becomes weak and the electron concentration increases when ZnO films are annealed in O2 atmosphere at 1000°C or in N2 atmosphere at 700°C. Since the donor in undoped ZnO is related to the oxygen vacancy, the observed green-yellow emission at around 2.3 eV is probably caused by defects other than oxygen vacancies. Our experimental results imply that it is related to interstitial Zn.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-05-15
著者
-
Fujita Miki
School Of Science And Engineering Waseda University
-
SASAJIMA Masanori
School of Science and Engineering, Waseda University
-
TATSUMI Tomohiko
School of Science and Engineering, Waseda University
-
KAWAMOTO Noriaki
School of Science and Engineering, Waseda University
-
Horikoshi Yoshiji
School Of Science And Engineering Waseda University
-
Sasajima Masanori
School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan
関連論文
- Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
- Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy
- Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Photoluminescence Quenching by Optical Bias in AlGaAs/GaAs Single Quantum Wells : Electrical Properties of Condonsed Matter
- Growth of GaAs/InAs Antidot Structure by Solid-Source MBE
- Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- X-Ray Analysis of In Distribution in Molecular Beam Epitaxy Grown InGaAs/GaAs Quantum Well Structures
- Electric Field Induced Recombination Centers in GaAs
- Electric Field Induced Recombination Centers in GaAs
- Growth Mechanism of GaAs Microdisk Structures by Area-Selective Epitaxy Using Migration-Enhanced Epitaxy
- Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy
- Scanning Tunneling Microscopy Study of GaAs (001) Surfaces Grown by Migration-Enhanced Epitaxy at Low Temperatures
- Growth of CuGaSe Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy
- Effects of MgO-Buffer Layer on the Structural and Optical Properties of Polycrystalline ZnO Films Grown on Glass Substrate
- Amorphous CuxGa1-xO Film Deposition by Ultrahigh Vacuum Radio Frequency Magnetron Sputtering
- Magnetic Properties of Multiply Mn $\delta$-Doped GaAs
- Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
- Electrical and Structural Properties of Heavily Ge-Doped GaAs Grown by Molecular-Beam Epitaxy
- Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures
- Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy