Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
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Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Horiguchi Seiji
Ntt Basic Research Laboratories
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Horiguchi Seiji
Ntt Basic Research Laboratories Ntt Corporation
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Fujiwara Akira
NTT Basic Research Laboratories, NTT Corporation
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TAKAHASHI Yasuo
NTT Basic Research Laboratories, NTT Corporation
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Fujiwara A
Ntt Basic Research Laboratories Ntt Corporation
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Fujiwara A
Ntt Corp. Atsugi Jpn
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