Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications
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概要
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We studied the low-frequency noise of n-channel silicon-on-insulator metal–oxide–semiconductor field-effect transistors (SOI MOSFETs) fabricated by a foundry process to evaluate their charge sensitivity at 8 K. Measurements were performed for conventionally doped and undoped (channel-implantation-free) MOSFETs mainly under surface-channel condition. For conventionally doped MOSFETs, we observed, in the frequency range of 0.1 Hz–100 kHz a Lorentzian spectrum with a cutoff frequency of approximately 200 Hz. This spectrum is linked to a peculiar multilevel random telegraph signal (RTS) related to multiple traps with nearly identical time constants. The origin of this noise, related to dopants, is discussed. We also found that the MOSFETs without channel dopant implantation exhibit a $1/ f$-like spectrum and have a smaller noise at 8 K with a charge noise spectral density of $7.8\times 10^{-3}$ e/Hz1/2 at 10 Hz, which is smaller than that of the specially designed GaAs FET reported in the literature.
- 2006-04-30
著者
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Ono Yukinori
NTT Basic Research Laboratories
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Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Clement Nicolas
Ntt Basic Research Laboratories Ntt Corporation
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Clement Nicolas
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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