Mechanism of Single-Charge Detection using Electron-Hole System in Si-wire Transistors

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概要

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• We demonstrate and investigate a method of single-charge detection in Si-wire metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on a silicon-on-insulator (SOI) wafer. The method is based on an electron-hole (e-h) system in the Si wire, which is formed by applying a large electric field across the Si wire and thereby making electrons and holes separated and localized at two opposite Si/SiO_2 interfaces. Photogenerated holes, which are accumulated at the front interface, are sensed by the electron current flowing at the back interface. The phenomenon can be regarded as a kind of floating-body effect in SOI-MOSFETs. With the use of a nanometer-sized wire channel, the scheme has sensitivity of the elementary charge. A unique recombination dynamics in the e-h system is found to enable the selective storage of the single hole; the recombination lifetime is strongly dependent on the number of stored holes due to the resultant change in the electron current. [DOI: 10.1143/JJAP.41.1209]

• 社団法人応用物理学会の論文
• 2002-03-15

著者

• TAKAHASHI Yasuo

  NTT Basic Research Laboratories, NTT Corporation

• Fujiwara Akira

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Yasuo

  Ntt Basic Research Laboratories Ntt Corporation

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