TAKAHASHI Yasuo | NTT Basic Research Laboratories, NTT Corporation

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概要

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著作論文

Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
Single-Electron Detection in Si-Wire Transistors at Room Temperature
Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors
Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
Threshold Voltage of Si Single-Electron Transistor
The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
Simultaneous-Sweep Method for Evaluation of Single-Electron Transistors with Barriers Induced by Gate Electric Field
Mechanism of Single-Charge Detection using Electron-Hole System in Si-wire Transistors

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