Murase Katsumi | Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)

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著作論文

Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
An Electron Beam Nanolithography System and its Application to Si Nanofabrication
Metrology of Atomic Force Microscopy for Si Nano-Structures
Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors

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