Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-01-15

著者

• Nagase Masao

  Ntt Basic Research Laboratories

• HORIGUCHI Seishi

  Optoelectronics Joint Research Laboratory

• KAGESHIMA Hiroyuki

  NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation

• Horiguchi Seiji

  Ntt Basic Research Laboratories

• Horiguchi Seiji

  Ntt Basic Research Laboratories Ntt Corporation

• TAKAHASHI Yasuo

  Graduate School of Information Science and Technology, Hokkaido University

• Shiraishi K

  Institute Of Physics University Of Tsukuba

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Nagase M

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Takahashi Y

  Osaka University

• TAKAHASHI Yasuo

  NTT Basic Research Laboratories, NTT Corporation

• MURASE Katsumi

  NTT Basic Research Laboratories, NTT Corporation

• Murase Katsumi

  Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)

• SHIRAISHI Kenji

  NTT Basic Research Laboratories

• KAGESHIMA Hiroyuki

  NTT LSI Laboratories

• Takahashi Y

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Kageshima Hiroyuki

  Ntt Basic Research Laboratories

• Takahashi Y

  Department Of Applied Physics School Of Engineering Tohoku University

• Takahashi Yasuo

  The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir

• Shiraishi K

  Institute Of Physics Tsukuba University

• Shiraishi K

  Japan Atomic Energy Res. Inst. Gunma Jpn

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• Takahashi Yasuo

  Ntt Basic Research Laboratories Ntt Corporation

• Horiguchi Seiji

  Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University

関連論文

• DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
• Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
• Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
• A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
• A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
• A Field-Effect Transistor with a Deposited Graphite Thin Film
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
• Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
• A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor Transistors
• A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
• Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors
• A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
• Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
• RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
• Line-Edge Roughness: Characterization and Material Origin
• Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
• Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
• Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
• First-Principles Analyses of O_2 Molecules around Ultrathin SiO_2/Si(100) Interface
• Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
• Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
• Threshold Voltage of Si Single-Electron Transistor
• Charge-Injection Effects in a Single 4,4''-Terphenyldithiol Molecule
• Fabrication of Diamond-Like Carbon Nanosprings by Focused-Ion-Beam Chemical Vapor Deposition and Evaluation of Their Mechanical Characteristics(Micro/Nano Fabrication,Microoptomechatronics)
• Resist Thinning Effect on Nanometer-Scale Line-Edge Roughness : Instrumentation, Measurement, and Fabrication Technology
• A New Approach to Reducing Line-Edge Roughness by Using a Cross-Linked Positive-Tone Resist
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
• Sub-10-nm Si Lines Fabricated Using Shifted Mask Patterns Controlled with Electron Beam Lithography and KOH Anisotropic Etching
• Fabrication of One-Dimensional Silicon Nanowire Structures with a Self-Aligned Point Contact
• Preparation and Characterization of a Microfabricated Oxide-on-Oxide Catalyst of α-Sb_2O_4/VSbO_4
• Effect of Nitrogen on Diffusion in Silicon Oxynitride
• The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
• Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
• Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
• Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
• The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
• Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
• Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
• Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
• Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
• Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
• Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
• Selective Electrodeposition Technology for Organic Insulator Films on Microelectromechanical-System Structures
• Anti-Sticking Effect of Organic Dielectric Formed by Electrodeposition in Microelectromechanical-System Structures
• Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
• Nanometrology of Si Nanostructures Embedded in SiO_2 using Scanning Electron Microscopy
• Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
• Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
• Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
• Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
• Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
• Low-Pressure OMVPE of GaAs Using Triethylgallium
• A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
• Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
• Phonon-Limited Electron Mobility in Ultra-Thin SOI MOSFETs
• Contact Conductance Measurement of Locally Suspended Graphene on SiC
• Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors
• A Spin-Polarized Scanning Electron Microscope with 5-nm Resolution : Instrumentation, Measurement, and Fabrication Technology
• A Method for Assembling Nano-Electromechanical Devices on Microcantilevers Using Focused Ion Beam Technology
• Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces
• Theoretical study on magnetoelectric and thermoelectric properties for graphene devices (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Magnetism of Single-Walled Carbon Nanotube with Pd Nanowire(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• A Theoretical Investigation of the Potential for Infer-Surface Migration of Ga Adatoms between GaAs(001) and (111)B Surfaces
• A Method for Calculating Momentum Matrix Elements with Pseudopotentials
• Universal Theory of Si Oxidation Rate Taking Account of Interfacial Si Emission
• First-Principles Study of the Oxide Growth Process on Silicon Surfaces and at Silicon-Oxide/Silicon Interfaces
• Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
• Removal of Gold Oxide by Low-Temperature Hydrogen Annealing for Microelectromechanical System Device Fabrication
• Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
• Evaluation of Thermal–Mechanical Vibration Amplitude and Mechanical Properties of Carbon Nanopillars Using Scanning Electron Microscopy
• Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
• Nano-Four-Point Probes on Microcantilever System Fabricated by Focused Ion Beam
• Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy
• Electrodeposition of Water-Repellent Organic Dielectric Film as an Anti-Sticking Coating on Microelectromechanical System Devices
• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
• Field-Effect Transistor with Deposited Graphite Thin Film
• Threshold Voltage of Si Single-Electron Transistor
• Line-Edge Roughness: Characterization and Material Origin
• Low-Energy Electron Emission from an Electron Enversion Layer of a Si/SiO2/Si Cathode for Nano-Decomposition
• Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors
• Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
• Mechanical Characteristics of Diamond-Like-Carbon Nanosprings Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
• Novel Proximity Effect Including Pattern-Dependent Resist Development in Electron Beam Nanolithography
• Nanometrology of Si Nanostructures Embedded in SiO2 using Scanning Electron Microscopy
• Carbon Multiprobes with Nanosprings Integrated on Si Cantilever Using Focused-Ion-Beam Technology
• Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio

もっと見る 閉じる

スポンサーリンク