Carbon Multiprobe on a Si Cantilever for Pseudo-Metal–Oxide–Semiconductor Field-Effect-Transistor
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概要
- 論文の詳細を見る
A newly developed scanning probe microscopy system with multiple probes has been applied to measurements of local electrical properties of semiconductor films. Carbon multiprobes fabricated by focused ion beam deposition on a Si cantilever were used for source and drain electrodes on a pseudo-silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) field-effect-transistor (FET) on which the Si substrate and buried oxide (BOX) act as a gate electrode and gate insulator, respectively. The pseudo-MOSFET characteristics of a 10-nm-thick Si layer on an SOI substrate were successfully measured using the multiprobe. Furthermore, a carbon film deposited by electron cyclotron resonance (ECR) plasma sputtering on a Si substrate with an oxide layer was confirmed as a semiconductor for the first time, using the pseudo-FET method with a carbon multiprobe. The results clearly demonstrate that this multiprobe system can be a powerful and widely applicable tool for measuring local device characteristics of electrical materials.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-03-15
著者
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Nagase Masao
Ntt Basic Research Laboratories
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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NAMATSU Hideo
NTT Basic Research Laboratories
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Yamaguchi Hiroshi
NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Nakamatsu Kenichiro
LASTI, Graduate School of Science, University of Hyogo, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
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Nagase Masao
NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Namatsu Hideo
NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Matsui Shinji
LASTI, Graduate School of Science, University of Hyogo, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
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