Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)
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概要
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We propose a quality control method for wafer-scale epitaxial graphene grown on SiC substrates. The peak position of Raman spectra of epitaxial graphene is an excellent indicator of film quality and reveals irregularities, such as graphene thickness inhomogeneity and SiC substrate defects. A comparison of microscopic Raman maps and scanning probe microscopy images of the same position of the sample revealed that wave numbers of Raman peaks (G and 2D band peaks) were strongly correlated with the strain in the graphene film. The increase in number of graphene layers (2 to 3--4 layers) induced phonon softening ({\sim}6 cm-1) and broadening ({\sim}6 cm-1) of the 2D band peak. Significant phonon softening and abnormal broadening of the Raman peaks were observed at residual scratches on the SiC substrate. The quantitative layer number distribution of graphene on SiC is successfully estimated from the wave number distribution of the 2D band peak.
- 2012-06-25
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Hibino Hiroki
Ntt Basic Research Laboratories
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Tomita Takuro
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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O Ryong-Sok
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Iwamoto Atsushi
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nishi Yuki
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Funase Yuya
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Yuasa Takahiro
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Nagase Masao
Graduate School of Advanced Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
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Hibino Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan
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