Strain Relaxation Mechanism in the Growth of InAs on GaAs(110) Surfaces Studied by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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Oyama Norihisa
Department Of Applied Physics And Phisico-infomatics Keio University
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