Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
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概要
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The step motion and structure transition on InAs and GaAs (001) surfaces are directly observed by scanning tunneling microscopy at high temperatures. A stable (2×4) structure is observed for the InAs surface even at temperatures high enough to cause the motion of monomolecular steps and kinks. At higher temperatures, domains with an In stable (4×2) structure (As desorbed region) are clearly observed surrounded by As stable (2×4) structures. These results differ from those for GaAs surfaces and indicate strong lateral interaction in(2×4) structures on InAs.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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