Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy : Condensed Matter
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概要
- 論文の詳細を見る
This paper investigates the effect of initial growth conditions on the structural and optical properties of GaAs and (AlGa)As/GaAs quantum well heterostructures (QWH) on (100)Si. Samples are grown by migration-enhanced epitaxy (MEE) at 300゜C. Only the growth conditions of the first GaAs monolayer on Si substrates are varied. Optimization requires: 1) no exposure of the hot Si surface to As, and 2) Ga-dominated initial growth conditions. Sharp low-temperature excitonic luminescence (8.0 meV (FWHM) for L_z = 2 nm) confirms the smooth heterointerfaces of the MEE-grown layers. Samples grown by conventional MBE at 300゜C show a clearly poorer crystal quality.
- 社団法人応用物理学会の論文
- 1988-03-20
著者
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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NAGANUMA Mitsuru
NTT Opto-electronics Laboratories
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Stolz Wolfgang
Ntt Basic Research Laboratories
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Stolz Wolfgang
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Phsik Philipps-universi
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Naganuma M
Ntt Opto-electronics Laboratories
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NAGANUMA Mitsuru
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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