Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy

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Flow-rate Modulation Epitaxy was applied to grow GaAs, AlAs, AlGaAs layers and n-AlGaAs/GaAs modulation doped heterostructures. This method considerably reduced the growth temperature, and high-quality GaAs and AlAs layers were obtained at the growth temperature as low as 550℃. Al_xGa_<1-x>As alloy layers, where x=n/(n+m), were formed by repeating the growth of m-monolayers of GaAs followed by the growth of n-monolayers of AlAs. Thus, the Al_xGa_<1-x>As layers are no longer "random alloys" but have "ordered structures". It was found that, in Flow-rate Modulation Epitaxy, the Si doping efficiency to Al_xGa_<1-x>As is quite high, and is almost constant in the growth temperature range between 500 and 625℃. Using this method, we fabricated modulation doped n-AlGaAs/GaAs heterostructures. At the growth temperature of 550℃, the 2DEG mobility as high as 7×10^4 cm^2/Vs was obtained at 6 K.
社団法人応用物理学会の論文
1986-06-20