Luminescence Characteristics from Gaussian Shaped Quantum Wells
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概要
- 論文の詳細を見る
Gaussian shaped quantum wells are fabricated by low temperature migration-enhanced epitaxy. Low temperature photoluminescence measurement shows the superior luminescence characteristics of Gaussian wells. Computer simulation using a one-dimensional tight-binding model shows that this effect is caused by the statistical cancellation of the influence from the surface roughness among the neighboring atomic layers.
- 社団法人応用物理学会の論文
- 1989-03-20
著者
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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YAMAGUCHI Hiroshi
NTT Electrial Communication Laboratories
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Yamaguchi Hiroshi
Ntt Electrical Communications Laboratories
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