Thermal Annealing Effect of AlAs-GaAs Superlattice Grown at 300℃ by Migration-Enhanced Epitaxy : Condensed Matter
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概要
- 論文の詳細を見る
AlAs-GaAs superlattices are grown at 300℃ on (100) GaAs substrates by migration-enhanced epitaxy at various As_4 deposition rates. They are then annealed at temperatures higher than the growth temperature. Superlattices grown at closely optimized As_4 deposition rates are unaffected by thermal annealing at temperatures as high as 800℃. After annealing, no change is observed in photoluminescence linewidth, and only slight changes are observed in its efficiency and emission energy.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Saku Tadashi
Ntt Electrical Communications Laboratories
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