Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-10-20
著者
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Yamaguchi H
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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KAWASHIMA Minoru
NTT Electrial Communication Laboratories
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YAMAGUCHI Hiroshi
NTT Electrial Communication Laboratories
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Yamaguchi H
Ntt Basic Research Laboratories
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Kawashima M
Ntt Basic Research Lab. Kanagawa
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