Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
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概要
- 論文の詳細を見る
AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown at 570℃ by modified metal-organic chemical vapor deposition, flow-rate modulation epitaxy, using optimal arsine flow rates. The full widths at half maximum of low-temperature photoluminescence spectra strongly depended on arsine flow rates. Under optimal conditions, their values were 8.8, 6.7, 5.0 and 4.8 meV for 1.7, 3.4, 5.1 and 6.8 nm-wide wells, respectively. The resulting narrow photoluminescence linewidths indicate that the heterointerfaces are very flat on an atomic scale, probably as a result of enhanced surface migration of Ga and Al atoms.
- 社団法人応用物理学会の論文
- 1989-02-20
著者
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Yamauchi Yoshibumi
Deparment Of Electrical And Electronic Engineering Iwate University
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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YAMAUCHI Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Yamauchi Y
Shizuoka Inst. Sci. And Technol. Fukuroi Jpn
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Makimoto T
Ntt Basic Research Laboratories
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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