Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• KUMAKURA Kazuhide

  NTT Basic Research Laboratories, NTT Corporation

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Kobayashi N

  The University Of Electro-communications Department Of Applied Physics And Chemistry

• KOBAYASHI Naoki

  The University of Electro-Communications, Department of Applied Physics and Chemistry

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