HORIKOSHI Yoshiji | NTT Basic Research Laboratories

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著作論文

Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
Extremely Sharp Photoluminescence from InGaAs/GaAs Quantum Wells Grown by Flow-Rate Modulation Epitaxy : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs
A New Si Doping Source for GaAs Growth by Molecular Beam Epitaxy
Comparison of GaAs Facet Formation on Patterned Substrate during Molecular Beam Epitaxy and Migration Enhanced Epitaxy
High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
High Mobility Electrons in AlGaAs/GaAs Modulation-Doped Heterostructures and Their Ballistic Characteristics
Carrier Concentration Saturation of Double Si Doping Layers in GaAs
Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy
In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
Annealing Properties of Si-Atomic-Layer-Doped GaAs
Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
Dependence of ErAs Clustering and Er Segregation in ErAs/GaAs Heterostructures on Growth Temperature
Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy : Semiconductors and Semiconductor Devices
Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy : Condensed Matter
Characterization of GaAs/Si/GaAs Heterostructures
Limit of Electron Mobility in AlGaAs/GaAs Modulation-doped Heterostructures
Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
Reduction of Deep Level Concentration in GaAs Layers Grown by Flow-Rate Modulation Epitaxy : Condensed Matter
p^+ -n^+ GaAs Tunnel Junction Diodes Grown by Flow-Rate Modulation Epitaxy
Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces
Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
Chemical Shift in Optical Reflection Spectra Observed During III-V Semiconductor Metalorganic Chemical Vapor Deposition Growth by Surface Photo-Absorption Method
Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy
Structural Properties of (GaAs)_(Si_2)_x Layers on GaAs(100) Substrates Grown by Migration-Enhanced Epitaxy
X-Ray Diffraction Analysis of One-Dimensional Quasiperiodic Superlattices Grown by Migration-Enhanced Epitaxy
Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy
Impurity Doping Effect on the Dislocation Density in GaAs on Si (100) Grown by Migration-Enhanced Epitaxy
Se Adsorption on (001) GaAs under Various AS_4 Pressures
Selenium Doping in GaAs Grown by Molecular Beam Epitaxy
Effect of As Pressure on Se δ-Doped in GaAs by Molecular Beam Epitaxy
Effects of Annealing on the Structural Properties of GaAs on Si(100) Grown at a Low Temperature by Migration-Enhanced Epitaxy
Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption Method
Influence of an As-Free Atmosphere in Migration-Enhanced Epitaxy on Step-Flow Growth
Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy

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