Briones F. | Centro Nacional De Microelectronica Csic Serrano
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概要
関連著者
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Briones F
Csic Serrano Madrid Esp
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Briones Fernando
Centro Nacional De Microelectronica Csic. Serrano
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Briones F.
Centro Nacional De Microelectronica Csic Serrano
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Ruiz Ana
Centro Nacional De Microelectronica:(present Address) Instituto De Ciencia De Materiales
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Gonzalez L
Centro Nacional De Microelectronica Csic Serrano
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GONZALEZ Y.
Centro Nacional de Microelectronica, CSIC Serrano
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GONZALEZ L.
Centro Nacional de Microelectronica, CSIC Serrano
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BRIONES F.
Centro Nacional de Microelectronica, CSIC Serrano
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ARMELLES Gaspar
Centro Nacional de Microelectronica, CSIC. Serrano
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Armelles Gaspar
Centro Nacional De Microelectronica
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Gonzalez Y.
Centro Nacional De Microelectronica Csic Serrano
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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Briones Fernando
Ntt Basic Research Laboratories:centro Nacional De Microelectronica
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CASTRILLO Pedro
Centro Nacional de Microelectronica, CSIC. Serrano
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RECIO Miguel
Centro Nacional de Microelectronica, CSIC., Serrano
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MELENDEZ Juan
Centro Nacional de Microelectronica, CSIC., Serrano
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KHIROUNI Kamel
Laboratoire de Physique des Solides, INSA, Avenue de Rangueil
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BARRAU Jean
Laboratoire de Physique des Solides, INSA, Avenue de Rangueil
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Recio Miguel
Centro Nacional De Microelectronica Csic. Serrano
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Barrau Jean
Laboratoire De Physique Des Solides Insa Avenue De Rangueil
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Melendez Juan
Centro Nacional De Microelectronica:(present Address) Universidad Carlos Iii. Escuela Politecnica Su
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Khirouni Kamel
Laboratoire De Physique Des Solides Insa Avenue De Rangueil
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Castrillo Pedro
Centro Nacional De Microelectronica Csic. Serrano
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
著作論文
- Low Temperature GaAs/Si Technology : from Si Substrate Preparation to the Epitaxial Growth
- In Situ Reflectance Anysotropy Monitoring of Antiphase Domains Evolution during Growth of GaAs/Si(001)
- Modulation Spectroscopies on a GaAs/InAs/GaAs Single-Monolayer Structure
- Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs
- Photoluminescence Study of Type I and Type II GaAs/GaP Strained-Layer Superlattices Grown on GaAs Substrates