Modulation Spectroscopies on a GaAs/InAs/GaAs Single-Monolayer Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-10-15
著者
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Ruiz Ana
Centro Nacional De Microelectronica:(present Address) Instituto De Ciencia De Materiales
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Briones F
Csic Serrano Madrid Esp
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Briones Fernando
Centro Nacional De Microelectronica Csic. Serrano
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Briones F.
Centro Nacional De Microelectronica Csic Serrano
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CASTRILLO Pedro
Centro Nacional de Microelectronica, CSIC. Serrano
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ARMELLES Gaspar
Centro Nacional de Microelectronica, CSIC. Serrano
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Armelles Gaspar
Centro Nacional De Microelectronica
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Castrillo Pedro
Centro Nacional De Microelectronica Csic. Serrano
関連論文
- Low Temperature GaAs/Si Technology : from Si Substrate Preparation to the Epitaxial Growth
- In Situ Reflectance Anysotropy Monitoring of Antiphase Domains Evolution during Growth of GaAs/Si(001)
- Modulation Spectroscopies on a GaAs/InAs/GaAs Single-Monolayer Structure
- Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs
- Photoluminescence Study of Type I and Type II GaAs/GaP Strained-Layer Superlattices Grown on GaAs Substrates
- Band Offset Transitivity in the AlGaAs/GaP/InP System
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