Band Offset Transitivity in the AlGaAs/GaP/InP System

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概要

• 論文の詳細を見る

• Two samples consisting of five periods of a GaP/InP short-period superlattice clad by AlGaAs layers have been grown by atomic layer molecular beam epitaxy, and have been structurally characterized by X-ray diffraction. Low-temperature photoluminescence and excitation photoluminescence measurements using circular polarization excitation and detection techniques have been performed. Results can be explained if the offset between AlGaAs/GaP is the one governed by the transitivity rule, provided a very small segregation is assumed in the GaP/InP system.

• 社団法人応用物理学会の論文
• 1994-09-15

著者

• Ruiz Ana

  Centro Nacional De Microelectronica:(present Address) Instituto De Ciencia De Materiales

• ARMELLES Gaspar

  Centro Nacional de Microelectronica, CSIC. Serrano

• MELENDEZ Juan

  Centro Nacional de Microelectronica, CSIC., Serrano

• Melendez Juan

  Centro Nacional De Microelectronica:(present Address) Universidad Carlos Iii. Escuela Politecnica Su

• Armelles Gaspar

  Centro Nacional De Microelectronica

• MAZUELAS Angel

  Centro Nacional de Microelectronica

• BACQUET Gerard

  Departement de Genie Physique

• HASSEN Fredg

  Departement de Genie Physique

関連論文

• Modulation Spectroscopies on a GaAs/InAs/GaAs Single-Monolayer Structure
• Photoluminescence Study of Type I and Type II GaAs/GaP Strained-Layer Superlattices Grown on GaAs Substrates
• Band Offset Transitivity in the AlGaAs/GaP/InP System
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