NAGANUMA Mitsuru | NTT Opto-electronics Laboratories
スポンサーリンク
概要
関連著者
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NAGANUMA Mitsuru
NTT Opto-electronics Laboratories
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Naganuma M
Ntt Opto-electronics Laboratories
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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KAWAMURA Yuichi
NTT Opto-electronics Laboratories
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Kawamura Y
Ntt Opto-electronics Laboratories
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Kawamura Y
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kawamura Y
Fuji Electric Corporate Res. And Dev. Ltd. Kanagawa Jpn
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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ASAI Hiromitsu
NTT Opto-electronics Laboratories
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Stolz Wolfgang
Ntt Basic Research Laboratories
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Stolz Wolfgang
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Phsik Philipps-universi
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Asai H
Ntt Opto-electronics Laboratories
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Kawamura Yuichi
Department Of Physics School Of Science And Engineering Waseda University:(present Adderss) Musashin
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NAGANUMA Mitsuru
NTT Basic Research Laboratories
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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KAWAMURA Yuichi
NTT Optc-electronics Laboratories
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Lui Wayne
NTT Opto-electronics Laboratories
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Magari Katsuaki
NTT Opto-electronics Laboratories
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Yokoyama Kiyoyuki
NTT Opto-electronics Laboratories
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Mikami O
Ntt Opto‐electronics Lab. Atsugi‐shi Jpn
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Mikami O
Chubu Univ. Aichi
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Wakita Koichi
NTT Opto-electronics Laboratories
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UENOHARA Hiroyuki
NTT Opto-electronics Laboratories
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IWAMURA Hidetoshi
NTT Opto-electronics Laboratories
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HASUMI Yuji
NTT Opto-electronics Laboratories
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Mikami Osamu
Ntt Opto-electronics Laboratories
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Okamura Masamichi
Musashino Electrical Communication Laboratory N.t.t.
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IWAMURA Hidetoshi
NTT Optc-electronics Laboratories
著作論文
- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes
- Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes
- Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy : Semiconductors and Semiconductor Devices
- Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy : Condensed Matter
- A Critique on the Use of Window Structure in Travelling Wave Semiconductor Optical Amplifiers