Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes

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概要

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• Effects of the pn-junction on the negative differential resistance (NDR) of InGaAs/InAlAs multiple quantum well resonant tunneling diodes (MQW-RTD) are studied. It is found that in order to observe a clear NDR, a pn-junction is necessary when the electrode (cladding) layers on both sides of the MQW layer are composed of wide-band-gap InAlAs layers. This is explained by the recombination of electrons with holes near the p-InAlAs electrode layer.

• 社団法人応用物理学会の論文
• 1990-07-20

著者

• KAWAMURA Yuichi

  NTT Opto-electronics Laboratories

• Kawamura Y

  Ntt Opto-electronics Laboratories

• Kawamura Y

  Research Institute For Advanced Science And Technology Osaka Prefecture University

• Kawamura Y

  Fuji Electric Corporate Res. And Dev. Ltd. Kanagawa Jpn

• ASAI Hiromitsu

  NTT Opto-electronics Laboratories

• NAGANUMA Mitsuru

  NTT Opto-electronics Laboratories

• Asai H

  Ntt Opto-electronics Laboratories

• Kawamura Yuichi

  Department Of Physics School Of Science And Engineering Waseda University:(present Adderss) Musashin

• Naganuma M

  Ntt Opto-electronics Laboratories

• KAWAMURA Yuichi

  NTT Optc-electronics Laboratories

関連論文

• Operation Characteristics of a Side-Light-Injection Multiple-Quantum-Well Bistable Laser for All-Optical Switching
• Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
• Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
• Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
• Magnetic Quantum Oscillations in In_Ga_As/In_Al_As Multiquantum Well Observed by Millimeter Wave Responce
• Transport Properties in InP/InAlAs Type II Single Heterostructure
• Measurement of the Energy Spread of the Cold Relativistic Electron Beam Using Thomson Backscattering of a High Power CO_2 Laser
• Direct Measurement of the Energy Distribution of an Intense Relativistic Electron Beam
• Molecular Beam Epitaxial Growth of Undoped Low-Resistivity In_xGa_P on GaAs at High Substrate Temperatures (500-580℃)
• Optical Properties of an InGaAlAs/InP Type-II Superlattice
• Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy
• Electroabsorption in an AlInAs/InP Type II Superlattice
• Negative Differential Conductivity of Photoconducting KTaO_3
• Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators
• Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
• Current Oscillation Related to N=3 Subband Levels up to Room Temperature in InGaAs/InAlAs MQW Diodes
• Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes
• Characterization and Surface Cleaning Technique for MOCVD Growth-Interrupted GaAs Films
• InAlAs/AlAsSb Type II Multiple Quantum Well Layers Lattice-Matched to InP Grown by Molecular Beam Epitaxy
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• High Frequency Characteristics of InAlAs/InGaAs HBT's
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• Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes
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• A Critique on the Use of Window Structure in Travelling Wave Semiconductor Optical Amplifiers
• Proposal on a Temperature-Insensitive Wavelength Semiconductor Laser
• Large Quantum-Confined Stark-Effect in Quaternary InGaAlAs Quantum Wells

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