Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes
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概要
- 論文の詳細を見る
Effects of the pn-junction on the negative differential resistance (NDR) of InGaAs/InAlAs multiple quantum well resonant tunneling diodes (MQW-RTD) are studied. It is found that in order to observe a clear NDR, a pn-junction is necessary when the electrode (cladding) layers on both sides of the MQW layer are composed of wide-band-gap InAlAs layers. This is explained by the recombination of electrons with holes near the p-InAlAs electrode layer.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
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KAWAMURA Yuichi
NTT Opto-electronics Laboratories
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Kawamura Y
Ntt Opto-electronics Laboratories
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Kawamura Y
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kawamura Y
Fuji Electric Corporate Res. And Dev. Ltd. Kanagawa Jpn
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ASAI Hiromitsu
NTT Opto-electronics Laboratories
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NAGANUMA Mitsuru
NTT Opto-electronics Laboratories
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Asai H
Ntt Opto-electronics Laboratories
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Kawamura Yuichi
Department Of Physics School Of Science And Engineering Waseda University:(present Adderss) Musashin
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Naganuma M
Ntt Opto-electronics Laboratories
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KAWAMURA Yuichi
NTT Optc-electronics Laboratories
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