Characterization and Surface Cleaning Technique for MOCVD Growth-Interrupted GaAs Films

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概要

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• This paper presents a study of the electrical properties and impuritiy profiles for MOCVD GaAs films fabricated by a sequence consisting of growth interruption, exposure of the surface to air, and resumption of growth. The growth-interrupted interface is depleted of electrons, and carbon, oxygen, and silicon impurities accumulate. The cause of the carrier depletion is found to be carbon acceptors which compensate donors. Wet chemical etching of the air-exposed surface (about 300 Å) is very effective in removing the surface contaminants, and this then eliminates the carrier depletion.

• 社団法人応用物理学会の論文
• 1985-11-20

著者

• ASAI Hiromitsu

  NTT Opto-electronics Laboratories

• Asai H

  Ntt Opto-electronics Laboratories

• Asai Hiromitsu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Sugiura Hideo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Corporation

関連論文

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• Liquid Phase Epitaxial Growth of CuGaSe_2 on ZnSe
• Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes
• Characterization and Surface Cleaning Technique for MOCVD Growth-Interrupted GaAs Films
• High Frequency Characteristics of InAlAs/InGaAs HBT's
• Proposal on a Temperature-Insensitive Wavelength Semiconductor Laser
• Large Quantum-Confined Stark-Effect in Quaternary InGaAlAs Quantum Wells

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