High Frequency Characteristics of InAlAs/InGaAs HBT's
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概要
- 論文の詳細を見る
InAlAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy are fabricated. A cutoff frequency (f_T) of 52 GHz is achieved in the HBT's with a base thickness of 1000 Å. A decrease in f_T under a high collector current density condition is observed. This is attributed both to the base widening and base-collector capacitance increase caused by the electron space charge in the collector depletion layer.
- 社団法人応用物理学会の論文
- 1989-10-20
著者
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FUKANO Hideki
NTT Opto-electronics Laboratories
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KAWAMURA Yuichi
NTT Opto-electronics Laboratories
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ASAI Hiromitsu
NTT Opto-electronics Laboratories
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TAKANASHI Yoshifumi
NTT Opto-electronics Laboratories
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KAWAMURA Yuichi
NTT Optc-electronics Laboratories
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