Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-07-20
著者
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Mikami O
Ntt Opto‐electronics Lab. Atsugi‐shi Jpn
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Mikami O
Chubu Univ. Aichi
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Wakita Koichi
NTT Opto-electronics Laboratories
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KAWAMURA Yuichi
NTT Opto-electronics Laboratories
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Kawamura Y
Ntt Opto-electronics Laboratories
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Kawamura Y
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kawamura Y
Fuji Electric Corporate Res. And Dev. Ltd. Kanagawa Jpn
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Mikami Osamu
Ntt Opto-electronics Laboratories
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ASAI Hiromitsu
NTT Opto-electronics Laboratories
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NAGANUMA Mitsuru
NTT Opto-electronics Laboratories
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Asai H
Ntt Opto-electronics Laboratories
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Kawamura Yuichi
Department Of Physics School Of Science And Engineering Waseda University:(present Adderss) Musashin
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Okamura Masamichi
Musashino Electrical Communication Laboratory N.t.t.
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Naganuma M
Ntt Opto-electronics Laboratories
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KAWAMURA Yuichi
NTT Optc-electronics Laboratories
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- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
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- Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes
- Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy : Semiconductors and Semiconductor Devices
- Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy : Condensed Matter
- A Critique on the Use of Window Structure in Travelling Wave Semiconductor Optical Amplifiers
- Proposal on a Temperature-Insensitive Wavelength Semiconductor Laser
- Large Quantum-Confined Stark-Effect in Quaternary InGaAlAs Quantum Wells
- Very-High-Allowability of Incidental Optical Power for Polarization-Insensitive InGaAs/InAlAs Multiple Quantum Well Modulators Buried in Semi-Insulating InP