Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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Okamura Masamichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Okamura Masamichi
Musashino Electrical Communication Laboratory N.t.t.
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
関連論文
- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
- Effect of Argon Atmosphere on Self-Absorption of a Spectral Line in Laser Microprobe Analysis
- First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
- The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- InGaAsP n-Channel Inversion-Mode MISFET
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- Effects of Uniaxial Stress on the Double Heterostructure Lasers
- Etching of Al_xGa_As in Alkaline Solution
- Optical Absorption at Dark Lines in Degraded Double-Heterostructure Lasers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Dependence of Net Gain of Buried Laser on Mirror Loss
- CVD Al_2O_3 Films on III-V Binary Semiconductors
- Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP
- Baking Effect on the Surface Morphology of GaAs-AlGaAs LPE
- Impurity Effect on Interface Morphology of AlGaAs LPE on Corrugated GaAs Substrates
- Dark Line Loss in Degraded Double-Heterostructure Lasers
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- Optically-Gated InP-MISFET : A New High-Gain Optical Detector
- Suppression of Relaxation Oscillation by Chemical Etching on Cleaved Facets of Semiconductor Lasers
- Optical Coupling Effect of Twin Lasers Fabricated by Wet Chemical Etching
- Effect of Temperature Fluctuations on the Surface Terraces of GaAs-AlGaAs Double Hetero Structure Wafers
- Three Dimensional Thermal Problems of Double-Heterostructure Semiconductor Lasers
- Dynamic Behavior of Buried Heterostructure Laser