Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-12-05
著者
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
関連論文
- Longitudinal Magnetophonon Resonance in n-Type InP in Ohmic and Hot Electron Region
- Magnentophonon Resonance in Epitaxial n-Inp in High Pulsed Magnetic Fields
- InGaAsP n-Channel Inversion-Mode MISFET
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- Calculation of Bond Length in Ga_In_xAs Ternary Semiconductors
- (InAs)_1(GaAs)_1 Layered Crystal Grown by MOCVD
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE
- (InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- Effects of Uniaxial Stress on the Double Heterostructure Lasers
- Etching of Al_xGa_As in Alkaline Solution
- Organometallic VPE Growth of InAs
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure
- Optical Absorption at Dark Lines in Degraded Double-Heterostructure Lasers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Dependence of Net Gain of Buried Laser on Mirror Loss
- CVD Al_2O_3 Films on III-V Binary Semiconductors
- Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
- Properties of InP Films Grown by Organometallic VPE Method
- Comparison between Atmospheric and Reduced Pressure GaAs MOCVD
- Organometallic VPE Growth of InAs_Sb_x on InAs
- Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
- Baking Effect on the Surface Morphology of GaAs-AlGaAs LPE
- Optically Induced Low Photoluminescence Regions in InGaAsP
- Impurity Effect on Interface Morphology of AlGaAs LPE on Corrugated GaAs Substrates
- Dark Line Loss in Degraded Double-Heterostructure Lasers
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- Optically-Gated InP-MISFET : A New High-Gain Optical Detector
- Suppression of Relaxation Oscillation by Chemical Etching on Cleaved Facets of Semiconductor Lasers
- Optical Coupling Effect of Twin Lasers Fabricated by Wet Chemical Etching
- Effect of Temperature Fluctuations on the Surface Terraces of GaAs-AlGaAs Double Hetero Structure Wafers
- Three Dimensional Thermal Problems of Double-Heterostructure Semiconductor Lasers
- Dynamic Behavior of Buried Heterostructure Laser