Optically-Gated InP-MISFET : A New High-Gain Optical Detector
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概要
- 論文の詳細を見る
A new optical detector with an enhancement-mode MISFET structure is demonstrated. This device consists of a semi-transparent gate metal and a pyrolitic Al_2O_3 insulator film formed on an Fe-doped semi-insulating Inp-crystal. A photocurrent-gain higher than 10^3 has been obtained under application of a gate bias. Moreover, a gate voltage lower than 2V is high enough to give this large amplification. The amplification mechanism is explained by an increase in the surface-channel conductivity via the development of an electron quasi-Fermi level shift toward the conduction-band edge under the illumination.
- 社団法人応用物理学会の論文
- 1982-01-05
著者
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Yamaguchi Eiichi
Musashino Electrical Communications Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamaguchi Eiichi
Musashino Electrical Communication Laboratory N.t.t.
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Kobayashi Takeshi
Musashino Electrical Communications Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
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